Maximum Allowable Bulk Defect Density for Generation–Recombination Noise-Free Device Operation
نویسندگان
چکیده
Generation–recombination noise associated with bulk defect levels in silicon is modeled in a partial differential equation-based device simulator to study the maximum allowable defect density that guarantees generation-recombination (g–r) noise-free operation in the presence of hotcarrier effects and space-charge injection.
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